MJE3055 datasheet. Manufacturer: USHA.

MJE3055T NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. in 3-pin TO-220 package. Operational temperature range from -65°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check MJE3055 (Advanced Semiconductor, Inc) MJE3055 (Continental Device India Ltd) MJE3055 (CENTR) MJE3055 (Fairchild Semiconductor) MJE3055 (ISKRA) MJE3055 (MOSP) MJE3055 (Motorola) MJE3055 (ON Semiconductor) MJE3055 (Semelab Plc.) MJE3055 (Samsung Electronic) MJE3055 (STI) MJE3055 (SGS-Thomson Microelectronics) MJE3055 (Wing Shing Electronic Co.)

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