| TC551664AJ-15 | 65,536-word by 16 bit CMOS static RAM, access time 15ns in 44-pin SOJ package. Operational temperature range from -10°C to 85°C. | Datasheet*) |
| TC551664AJ-20 | 65,536-word by 16 bit CMOS static RAM, access time 20ns in 44-pin SOJ package. Operational temperature range from -10°C to 85°C. | Datasheet*) |
| TC551664BFT-12 | 65,536-word by 16 bit CMOS static RAM, access time 12ns in 44-pin TSOP package. Operational temperature range from -10°C to 85°C. | Datasheet*) |
| TC551664BFT-15 | 65,536-word by 16 bit CMOS static RAM, access time 15ns in 44-pin TSOP package. Operational temperature range from -10°C to 85°C. | Datasheet*) |
| TC551664BJ-12 | 65,536-word by 16 bit CMOS static RAM, access time 12ns in 44-pin SOJ package. Operational temperature range from -10°C to 85°C. | Datasheet*) |
| TC551664BJ-15 | 65,536-word by 16 bit CMOS static RAM, access time 15ns in 44-pin SOJ package. Operational temperature range from -10°C to 85°C. | Datasheet*) |
| TC5516AF | 250ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516AF-2 | 200ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516AFL | 250ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516AFL-2 | 200ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516AP | 250ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516AP-2 | 200ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516APL | 250ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516APL-2 | 200ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM in 24-pin PDIP package. Operational temperature range from -30°C to 85°C. | Datasheet*) |
| TC5516 | 2,048 WORD X 8 BIT CMOS STATIC RAM | Datasheet*) |
| TC551664AJ | 65,536-WORD BY 16-BIT CMOS STATIC RAM | Datasheet*) |
| TC551664BJ | 65,536-WORD BY 16-BIT CMOS STATIC RAM | Datasheet*) |
