28LV64JC-3 series datasheets. Manufacturer: TURBO.

28LV64JC-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64JC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64JC-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64JC-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64JI-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64JI-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64JI-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64JI-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64JM-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64JM-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64JM-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64JM-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64PC-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64PC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64PC-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64PC-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64PI-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64PI-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64PI-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64PI-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64PM-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64PM-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64PM-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64PM-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64SC-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64SC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64SC-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64SC-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64SI-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64SI-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64SI-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64SI-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64SM-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64SM-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64SM-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64SM-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64TC-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64TC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64TC-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64TC-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV64TI-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64TI-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64TI-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64TI-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV64TM-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64TM-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64TM-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV64TM-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) There are other manufacturers for this components. For more information please check 28LV64JC-3 (TRBIC)

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