28LV256JC-3 series datasheets. Manufacturer: TURBO.

28LV256JC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256JC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256JC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256JC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256JI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256JI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256JI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256JI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256JM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256JM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256JM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256JM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256PC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256PC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256PC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256PC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256PI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256PI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256PI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256PI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256PM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256PM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256PM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256PM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256SC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256SC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256SC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256SC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256SI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256SI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256SI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256SI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256SM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256SM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256SM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256SM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256TC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256TC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256TC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256TC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28LV256TI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256TI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256TI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28LV256TM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256TM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256TM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28LV256TM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) There are other manufacturers for this components. For more information please check 28LV256JC-3 (TRBIC)

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