28C256AJC-1 series datasheets. Manufacturer: TURBO.

28C256AJC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256AJC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256AJC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256AJC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256AJI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256AJI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256AJI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256AJI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256AJM-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256AJM-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256AJM-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256AJM-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256APC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256APC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256APC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256APC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256API-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256API-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256API-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256API-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256APM-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256APM-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256APM-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256APM-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ASC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ASC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ASC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ASC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ASI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ASI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ASI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ASI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ASM-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ASM-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ASM-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ASM-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ATC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ATC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ATC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ATC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C256ATI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ATI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ATI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ATI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C256ATM-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ATM-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ATM-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C256ATM-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) There are other manufacturers for this components. For more information please check 28C256AJC-1 (TRBIC)

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