BUK555-100 series datasheets. Manufacturer: Philips Semiconductors.

BUK555-100A PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=25A, drain-source on-state resistance=0.085 Ohm in 3-pin TO-220AB package. Operational temperature range from -55°C to 175°C. Datasheet*) BUK555-100B PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm in 3-pin TO-220AB package. Operational temperature range from -55°C to 175°C. Datasheet*) BUK555-100A PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 25 A. in 3-pin TO220AB package. Operational temperature range from 0°C to 175°C. Datasheet*) BUK555-100B PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 22 A. in 3-pin TO220AB package. Operational temperature range from 0°C to 175°C. Datasheet*) BUK555-100 PowerMOS transistor Logic level FET Datasheet*)

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