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BDT29 series datasheets. Manufacturer: Philips Semiconductors.
| BDT29 | 80V Vcbo, 1.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29A | 100V Vcbo, 1.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29B | 120V Vcbo, 1.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29C | 140V Vcbo, 1.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29AF | 100V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29BF | 120V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29CF | 140V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29DF | 160V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
| BDT29F | 80V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
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