NTE5864 series datasheets. Manufacturer: NTE.

NTE5864 Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. Datasheet*) NTE5865 Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. Datasheet*) NTE5884 Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. Datasheet*) NTE5885 Silicon power rectifier diode. Anode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. Datasheet*) NTE5888 Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. Datasheet*) NTE5889 Silicon power rectifier diode. Anode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. Datasheet*)

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