IRF730 series datasheets. Manufacturer: GESS.

IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF730 (Fairchild Semiconductor) IRF730 (Intersil Corp.) IRF730 (International Rectifier) IRF730 (Philips Semiconductors) IRF730 (SGS-Thomson Microelectronics)

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