IRF720 series datasheets. Manufacturer: GESS.

IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF720 (Fairchild Semiconductor) IRF720 (Intersil Corp.) IRF720 (Samsung Electronic) IRF720 (SGS-Thomson Microelectronics)

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