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IRF430 series datasheets. Manufacturer: GESS.
IRF430 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF431 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF432 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF433 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
There are other manufacturers for this components. For more information please check IRF430 (Fairchild Semiconductor) IRF430 (Intersil Corp.) IRF430 (International Rectifier) IRF430 (Semelab Plc.) IRF430 (Samsung Electronic)
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