IRF130 series datasheets. Manufacturer: GESS.

IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF130 (Fairchild Semiconductor) IRF130 (Intersil Corp.) IRF130 (International Rectifier) IRF130 (Semelab Plc.) IRF130 (Samsung Electronic)

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